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IXTC180N085T
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS220 (IXTC) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
R G = 5 Ω (External)
75
120
8800
950
110
32
70
55
65
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
170
40
50
nC
nC
nC
1.Gate 2. Drain
3.Sourc e
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
R thJC
1.0 °C/W
R thCH
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
0.50
Characteristic Values
Min. Typ. Max.
°C/W
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 25A, V GS = 0V, Note 1
I F = 90A, V GS = 0V, -di/dt = 100A/ μ s
V R = 40V
63
4.1
129
180
480
1.0
A
A
V
ns
A
nC
Notes: 1. Pulse Test: t ≤ 300 μ s, Duty Cycle d ≤ 2 %.
2. Drain and Source Kelvin Contacts must be Located Less than 5 mm
from the Plastic Body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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